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TW083N65C,S1F

TW083N65C,S1F

MOSFET G3 650V SiC-MOSFET TO-247 83mohm

Category

Mfr Part #

TW083N65C,S1F

Life Cycle

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

Stock : 45

Packaging Type

-

VendorPart#

757-TW083N65CS1F

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Arrow Americas

Arrow Americas

* TEMPORARILY SUSPENDED

RESTRICTED*


Packaging Type

-

VendorPart#

V36:1790_26893206

Factory Lead Time

0 Days

Ware House

United States of America

Ships In

Ships in 1 days

HTS Code

EA

Min: 30
Mult: 1

0

Arrow Americas

Arrow Americas

* TEMPORARILY SUSPENDED

RESTRICTED*


Packaging Type

-

VendorPart#

V99:2348_26893206

Factory Lead Time

0 Days

Ware House

United States of America

Ships In

Ships in 1 days

HTS Code

EA

Min: 30
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 142

Packaging Type

Tube

VendorPart#

264-TW083N65CS1F-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drain to Source Voltage (Vdss)

650 V

Drive Voltage (Max Rds On, Min Rds On)

18V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

28 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds

873 pF @ 400 V

Mounting Type

Through Hole

Operating Temperature

175°C

Package / Case

TO-247-3

Power Dissipation (Max)

111W (Tc)

Rds On (Max) @ Id, Vgs

113mOhm @ 15A, 18V

Supplier Device Package

TO-247

Technology

SiCFET (Silicon Carbide)

Vgs (Max)

+25V, -10V

Vgs(th) (Max) @ Id

5V @ 600µA